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PD - 94167A
HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA)
IRFY11N50CMA 500V, N-CHANNEL
Product Summary
Part Number
IRFY11N50CMA BVDSS
500V
RDS(on) 0.56
ID 10A
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 10 6.6 40 125 1.0 20 205 10 12.5 9.6 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRFY11N50CMA
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
500 -- -- -- 2.0 6.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.59 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.56 0.65 4.0 -- 25 250 100 -100 58 15 26 22 71 47 43 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 6.6A VGS = 10V, ID = 10A VDS = VGS, ID = 250A VDS 15V, IDS = 6.6A VDS = 500V ,VGS=0V VDS = 400V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 10A VDS = 400V VDD = 250V, ID = 10A, VGS =10V, RG = 9.1
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1390 216 12
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 10 40 1.5 660 4.5
Test Conditions
A
V ns C Tj = 25C, IS = 10A, VGS = 0V Tj = 25C, IF = 10A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.0
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFY11N50CMA
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
4.5V
0.1
0.1
4.5V
0.01 0.1 1
20s PULSE WIDTH T = 25 C
J 10 100
0.01 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 10A
I D , Drain-to-Source Current (A)
2.5
10
TJ = 150 C TJ = 25 C
2.0
1.5
1
1.0
0.5
0.1 4.0
V DS =15 50V 20s PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFY11N50CMA
2400
2000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 10A
16
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance (pF)
1600
Ciss
12
1200
C oss
8
800
400
C rss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
10
TJ = 150 C TJ = 25 C
ID, Drain-to-Source Current (A)
100
10
1
1ms
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V)
10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFY11N50CMA
10.0
VDS VGS
RD
8.0
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
6.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
0.0001
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFY11N50CMA
EAS , Single Pulse Avalanche Energy (mJ)
400
15V
300
TOP BOTTOM ID 4.5A 6.3A 10A
VDS
L
D R IV E R
RG
D .U .T.
IA S
200
+ - VD D
A
VGS 20V
tp
0 .01
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature C) ( J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFY11N50CMA
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50 V, Starting TJ = 25C, L= 4.0mH Peak IAS = 10A, VGS =10 V, RG= 25
ISD 10A, di/dt 350 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 500V, TJ 150C
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01
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